Table of Contents
Which factor decides the diameter of wafer in Czochralski process?
The diameter of the ingot is controlled by the temperature of molten solution, and the composition of the residual liquid melt in the crucible is varied during the growth. With the Czochralski method, a skilled researcher can grow single QCs of about 1 cm in diameter and several centimeters in length.
What is seed in Czochralski process?
The Czochralski (CZ) method is a crystal growth technology that starts with insertion of a small seed crystal into a melt in a crucible, pulling the seed upwards to obtain a single crystal. The method is named after the Polish scientist Jan Czochralski, who developed it in 1916.
Which of the following is made by Czochralski process Mcq?
D. Explanation: the melt and the growing crystals are usually rotated counterclockwise during pulling in the process of czochralski, in order to maintain a constant temperature, melt uniformity, etc.
What is the Czochralski method?
The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide ), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.
What are Czochralski wafers used for?
Czochralski (Cz) 1 wafers are the most commonly used type of silicon wafer, and are used by both the solar and integrated circuit industry. The process of making a large single crystalline silicon ingot by the Czochralski process is shown below.
Does Czochralski silicon contain oxygen?
During growth, the walls of the crucible dissolve into the melt and Czochralski silicon therefore contains oxygen at a typical concentration of 10 18 . Oxygen impurities can have beneficial or detrimental effects. Carefully chosen annealing conditions can give rise to the formation of oxygen precipitates.
What is liquid encapsulated Czochralski (LEC)?
Sketch of a Cz process with repeated use of the crucible by recharging and without cooling down the crucible between growth runs. If the material to be grown has a high partial pressure of one or more components at the melting point, a modified Cz-set-up can be used which is called the Liquid Encapsulated Czochralski method (LEC).